513.001 Molecular and Solid State Physics

Maximum field strength

A silicon p-n diode has a doping of N_d = 3.0E+15 cm^-3 and N_a = 8.0E+16 cm^-3. At 300 K the built-in potential is V_bi = 0.71563860253061 V, the depletion width on the n-side is W_n = 5.4978634564033E-7 m, and the depletion width on the p-side is W_p = 2.0616987961512E-8 m.

The relative dielectric constant of silicon is ε_r = 11.9.